d na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 IRFM460 500v, n-channel features ? isolated case ? hermetically sealed package ? repetitive avalanche rating ? dynamic dv/dt rating ? ceramic eyelets ? mil six screening available applications ? high reliability power supplies ? switch mode power supplies ? battery back-up supplies ? high speed power switching absolute maximum ratings package to-254 case outline 430 k.1mtvp. pin 1:d pin 2: s pin 3: g -150 typ. parameter continuous drain current ip @ tc = 25 c, vgs @ 10v continuous drain current ip @ tc = 1 00c, vgs @ 1 0 v pulse drain current idm power dissipation pd @ tc =25 c linear derating factor gate-to-source voltage vgs peak diode recovery dv/dt operating & storage temperature tj & tstg maximum 19 12 76 250 2.0 20 3.5 -55 to 150 units a a a w w/c v v/ns c quality semi-conductors
IRFM460 static @ tj = 25c (unless otherwise specified) parameter drain-to-source breakdown voltage v(br)dss static drain to source on-resistance ros(on) gate threshold voltage vgs drain-to-source leakage current bss gate-to-source forward leakage igss gate-to-source reverse leakage igss min. 500 ? 2.0 ? ? ? ? typ. ? ? ? ? ? ? ? max. ? 0.27 0.31 4.0 25 250 100 -100 units v u v ua na conditions vgs = 0v, id = 1 .oma vgs = 10v, b = 12a vqs = 10v, b = 19a vds= vgs, b = 250ua vds = 0.8 x max rating, vgs = 0v vds = 0.8 x max rating vgs = 0v, tj=125c vgs = 20v vgs = -20v dynamic @ tj = 25c (unless otherwise specified) parameter forward transconductance gfs total gate charge qg gate-to-source charge qgs gate-to-drain ("miller") charge qgd turn-on-delay time td(on) rise time tr turn-off-delay time td(0ff) fall time tf input capacitance ciss output capacitance coss reverse transfer capacitance crss internal drain inductance ld internal source inductance ls min. 13 ? ? ? ? ? ? ? ? ? ? ? ? typ. ? ? ? ? ? ? ? ? 4300 1000 250 8.7 8.7 max. ? 190 27 135 35 120 130 98 ? ? ? ? ? units s nc pf nh conditions vds = 15v, bs = 12a id = 19a vds = 0.5 x max rating vgs - 1 0v vdd = 250v b ? -i qa r_ - 0 ^"su vgs = 0v vds = 25v f= 1.0 mhz measured from drain lead, 6mm from package to center of die. measured from the source lead, 6mm from package to source bonding pad.
IRFM460 avalanche characteristics parameter single pulse avalanche energy eas avalanche current iar repetitive avalanche energy ear typ. ? ? ? max. 1200 19 25 units mj a mj thermal resistance parameter junction-to-case rejc case-to-sink, flat, greased surface r9cs junction-to-ambient reja typ. ? 0.21 ? max. 0.5 ? 48 units c/w diode characteristics parameter continuous source current is pulsed source current ism diode forward voltage vsd reverse recovery time tn- reverse recovery charge qrr forward turn-on time ton min. ? ? ? ? ? typ. ? ? ? ? ? max. 19 76 1.8 580 8.1 units a v ns uc conditions tj = 25c, is=19a, vgs=ov tj = 25c, if=19a ql/ut - luua/us vdd d 50v intrinsic turn-on time is negligible
|
